E.N. Kablov, B.V. Shchetanov, A.A. Shavnev, A.N. Nyafkin, V.V. Chibirkin, V.V. Eliseev, V.A. Martynenko, V.G. Myskatin'ev, L.A. Emix, S.M. Vdovin, K.H. Nishchev
Increase of reliability of power IGBT-modulus by means of high filled metal matrix composite of Al-SiC systemMain factor of providing the maximal productivity of semi-conductor devices is efficiency of heat transfer from a crystal to the heat-carrier, characterized by thermal resistance. From the point of view of thermal processes, power packs can reliably function on the understanding that there is an effective heat rejection. In a complex multilayered structure for heat rejection the heat-rejecting substrates are of prime importance. It is especially actual at growing need for new power semi-conductor devices where the heat-rejecting substrates should possess high heat conductivity and low factor of thermal expansion.
Keywords: filled metal matrix composite of Al-SiC metal system, power semi-conductor devices, for example (IGBT-modulus), heat-rejecting substrates, heat-resistance, heat conductivity, factor of thermal expansion
- Gilleo K., Ph.D. MEMS/MOEMS Packaging Concepts, Designs, Materials, and Processes - McGraw-Hill //Nanoscience and Technology Series. 2005. 239 p.
- Occhionero M.A., Adams R.W., Saums D. AlSiC for Optoelectronic //Thermal Management and Packaging Designs. 2001. 5 p.
- Occhionero M.A., Fennessy K.P., Adams R.W., Sundberg G.J. AlSiC Baseplates for Power IGBT Modules: Design, Performance and Reliability //Ceramics Process Systems. 2003. 6 p.